2SC5593 silicon npn epitaxial high frequency low noise amplifier ade-208-797 (z) 1st. edition nov. 2000 features high gain bandwidth product f t = 23 ghz typ. high power gain and low noise figure ; pg = 18 db typ. , nf = 1.8 db typ. at f = 1.8 ghz outline cmpak-4 1. emitter 2. collector 3. emitter 4. base 1 4 3 2 note: marking is ?h- .
2SC5593 2 absolute maximum ratings (ta = 25 c) item symbol ratings unit collector to base voltage v cbo 12 v collector to emitter voltage v ceo 4.5 v emitter to base voltage v ebo 1v collector current i c 12 ma collector power dissipation pc 50 mw junction temperature tj 150 c storage temperature tstg ?5 to +150 c electrical characteristics (ta = 25 c) item symbol min typ max unit test conditions collector to base breakdown voltage v (br)cbo 12v i c = 10 m a , i e = 0 collector cutoff current i cbo 1 m av cb = 10 v , i e = 0 collector cutoff current i ceo 1 m av ce = 4 v , r be = emitter cutoff current i ebo 12 m av eb = 1 v , i c = 0 dc current transfer ratio h fe 60 100 140 v v ce = 2 v , i c = 10 ma collector output capacitance cob 0.16 0.4 pf v cb = 2 v , i e = 0 f = 1 mhz gain bandwidth product f t 20 23 ghz v ce = 2 v , i c = 10 ma f = 2 ghz power gain pg 14 18 db v ce = 2 v , i c = 10 ma f = 1.8 ghz noise figure nf 1.8 2.3 db v ce = 2 v , i c = 3 ma f = 1.8 ghz
2SC5593 3 main characteristics 200 150 100 50 0 50 100 150 200 10 0.1 1 10 12 5 10 20 50 100 0 10 20 30 40 50 100 200 0 1 20 100 collector power dissipatio pc (mw) ambient temperature ta ( c) collector power dissipation curve collector to base voltage v (v) cb collector output capacitance cob (pf) collector output capacitance vs. collector to base voltage collector current i (ma) c dc current transfer ratio h fe dc current transfet ratio vs. collector current collector current i (ma) c gain bandwidth prodfuct f (ghz) t gain bandwidth product vs. collector current 25 50 v = 3 v ce 0.2 0.4 0.6 0.8 1.0 0 0.2 0.5 2 5 i = 0 f = 1mhz e v = 3 v ce 2 v 1 v 2 v 1 v
2SC5593 4 1 5 10 50 100 10 1 10 100 3 5 0 1 20 100 power gain pg (db) power gain vs. collector current s parameter |s | (db) collector current i (ma) c noise figure nf (db) noise figure vs. collector current 25 50 4 8 12 16 20 0 25 20 50 0 4 8 12 16 20 collector current i (ma) c 2 20 4 2 1 21 21 2 s parameter vs. collector current 21 collector current i (ma) c 2 v 1 v f = 1.8ghz v = 3 v ce v = 1 to 3 v ce f = 1.8ghz v = 3 v ce 2 v 1 v f = 2ghz
2SC5593 5 10 5 4 3 2 1.5 1 .8 -2 -3 -4 -5 -10 .6 .4 .2 0 -.2 -.4 -.6 -.8 -1 -1.5 .2 .4 .6 .8 1 2 3 4 5 1.5 10 scale: 5 / div. 0 30 60 90 120 150 180 -150 -90 -60 -30 -120 scale: 0.02 / div. 0 30 60 90 120 150 180 -150 -90 -60 -30 -120 10 5 4 3 2 1.5 1 .8 -2 -3 -4 -5 -10 .6 .4 .2 0 -.2 -.4 -.6 -.8 -1 -1.5 .2 .4 6 .8 1 2 3 4 5 1.5 10 condition : 100 to 2000 mhz (100 mhz step) c ce v = 2 v , i = 10 ma condition : 100 to 2000 mhz (100 mhz step) condition : 100 to 2000 mhz (100 mhz step) condition : 100 to 2000 mhz (100 mhz step) s11 parameter vs. frequency s21 paramter vs. frequency s12 parameter vs. frequency s22 parameter vs. frequency ce v = 2 v , i = 10 ma ce v = 2 v , i = 10 ma ce v = 2 v , i = 10 ma c c c
2SC5593 6 s-parameter ( v ce = 2 v, i c = 10 ma, zo = 50 w ) s11 s21 s12 s22 f (mhz) mag ang mag ang mag ang mag ang 100 0.804 ?.2 22.02 172.5 0.00305 94.6 0.993 ?.4 200 0.795 ?7.8 21.55 165.0 0.0067 86.8 0.986 ?.1 300 0.776 ?7.4 20.88 157.5 0.0107 85.4 0.972 ?2.7 400 0.746 ?5.8 20.05 150.2 0.0146 82.5 0.947 ?7.2 500 0.714 ?4.5 18.93 143.7 0.0182 78.4 0.917 ?1.2 600 0.673 ?3.2 17.84 137.9 0.0215 74.8 0.881 ?5.1 700 0.632 ?9.9 16.60 132.5 0.0249 71.8 0.842 ?8.3 800 0.595 ?7.1 15.69 127.9 0.0274 67.9 0.808 ?1.2 900 0.557 ?4.6 14.64 123.5 0.0296 65.1 0.763 ?3.7 1000 0.519 ?9.1 13.68 119.5 0.0319 63.6 0.729 ?5.6 1100 0.488 ?6.0 12.88 116.0 0.0337 61.6 0.696 ?7.2 1200 0.454 ?1.1 12.03 112.8 0.0350 60.4 0.666 ?8.6 1300 0.430 ?5.9 11.26 110.6 0.0366 58.8 0.644 ?9.5 1400 0.403 ?01.8 10.69 107.8 0.0382 57.4 0.619 ?0.6 1500 0.377 ?06.3 10.16 105.4 0.0401 56.6 0.598 ?1.2 1600 0.364 ?11.0 9.66 103.6 0.0410 56.3 0.581 ?2.0 1700 0.346 ?16.6 9.19 101.4 0.0422 55.6 0.564 ?2.6 1800 0.327 ?20.0 8.79 99.3 0.0435 55.2 0.550 ?3.2 1900 0.313 ?24.9 8.40 97.5 0.0447 55.2 0.537 ?3.9 2000 0.296 ?30.8 7.99 95.5 0.0457 54.8 0.525 ?4.0
2SC5593 7 package dimensions 2.0 0.2 0.3 2.1 0.3 0.65 0.6 1.25 0.2 0.16 0 ?0.1 0.9 0.1 + 0.1 ?0.05 0.4 + 0.1 ?0.05 0.3 + 0.1 ?0 05 + 0.1 ?0.06 0.65 0.65 1.3 0.2 0.3 + 0.1 ?0.05 0.425 0.425 0.2 hitachi code jedec eiaj mass (reference value) cmpak-4(t) conforms 0.006 g 1.25 0.1 as of january, 2001 unit: mm
2SC5593 8 cautions 1. hitachi neither warrants nor grants licenses of any rights of hitachi? or any third party? patent, copyright, trademark, or other intellectual property rights for information contained in this document. hitachi bears no responsibility for problems that may arise with third party? rights, including intellectual property rights, in connection with use of the information contained in this document. 2. products and product specifications may be subject to change without notice. confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. hitachi makes every attempt to ensure that its products are of high quality and reliability. however, contact hitachi? sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. design your application so that the product is used within the ranges guaranteed by hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail- safes, so that the equipment incorporating hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the hitachi product. 5. this product is not designed to be radiation resistant. 6. no one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from hitachi. 7. contact hitachi? sales office for any questions regarding this document or hitachi semiconductor products. hitachi, ltd. semiconductor & integrated circuits. nippon bldg., 2-6-2, ohte-machi, chiyoda-ku, tokyo 100-0004, japan tel: tokyo (03) 3270-2111 fax: (03) 3270-5109 copyright ? hitachi, ltd., 2000. all rights reserved. printed in japan. hitachi asia ltd. hitachi tower 16 collyer quay #20-00, singapore 049318 tel : <65>-538-6533/538-8577 fax : <65>-538-6933/538-3877 url : http://www.hitachi.com.sg url northamerica : http://semiconductor.hitachi.com/ europe : http://www.hitachi-eu.com/hel/ecg asia : http://sicapac.hitachi-asia.com japan : http://www.hitachi.co.jp/sicd/indx.htm hitachi asia ltd. (taipei branch office) 4/f, no. 167, tun hwa north road, hung-kuo building, taipei (105), taiwan tel : <886>-(2)-2718-3666 fax : <886>-(2)-2718-8180 telex : 23222 has-tp url : http://www.hitachi.com.tw hitachi asia (hong kong) ltd. group iii (electronic components) 7/f., north tower, world finance centre, harbour city, canton road tsim sha tsui, kowloon, hong kong tel : <852>-(2)-735-9218 fax : <852>-(2)-730-0281 url : http://www.hitachi.com.hk hitachi europe ltd. electronic components group. whitebrook park lower cookham road maidenhead berkshire sl6 8ya, united kingdom tel: <44> (1628) 585000 fax: <44> (1628) 585160 hitachi europe gmbh electronic components group dornacher stra b e 3 d-85622 feldkirchen, munich germany tel: <49> (89) 9 9180-0 fax: <49> (89) 9 29 30 00 hitachi semiconductor (america) inc. 179 east tasman drive, san jose,ca 95134 tel: <1> (408) 433-1990 fax: <1>(408) 433-0223 for further information write to: colophon 2.0
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